FINFET

 

 What is FinFET technology?
A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal-oxide-semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel, forming a double gate structure.

any one technology node the FinFET has several advantages over its planar counterpart including, but not limited to:

Very good electrostatic control of the channel, meaning the channel can be “choked off” more easily. FinFETs boast a near-ideal sub-threshold behavior (associated with leakage), something that’s not easy to achieve in planar technology without considerable effort.

Greatly reduced short channel effects. The short channel effects in planar technology are complex and have a significant impact on gate length variations and, therefore, on electrical performance.
High integration density, 3D, thanks to vertical channel orientation delivers more performance per linear “w” than planar even after the isolation dead-area between the fins is taken into account.
Smaller variability, especially variability resulting from random dopant fluctuation primarily due to doping-free or low doping channels. 

 

 

 

 

 Why do we need FinFET?

FinFET technology provides numerous advantages over bulk CMOS, such as higher drive current for a given transistor footprint, hence higher speed, lower leakage, hence lower power consumption, no random dopant fluctuation, hence better mobility and scaling of the transistor beyond 28nm.

 

article by

GANESH MAHER